Lattice Disorder and Photoluminescence of Er-Implanted AlNCrystalline Films

AlN crystalline films have been grown on SiC substrates by molecular beam epitaxy. Er doping was carried out by implantation with energy 180 keV to fluence of 1 x ¹⁵ions/cm². The as-implanted samples were then annealed at 650, 800, 950, and 1100°C respectively, to remove defects and to make Er ions optically active. The annealing up to 1100°C did not exert significant influence on either Er distribution or the profiles of implant-induced lattice damage. Strong 1.54μm photoluminescence was observed in Er-implanted AlN at room temperature. The experimental results indicated that the photoluminescence lifetime can be improved by increasing the annealing temperature. The maximum photoluminescence lifetime was measured to be 2.3 ms.