Monte Carlo Simulation of Growth of Thin Film Prepared by Pulsed Laser
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Abstract
We use the Monte-Carlo simulation method to perform the early growth stage of thin film prepared by pulsed laser deposition. We focus on the number of point defects on the substrate surface varying with the energy density of laser and substrate temperature. The results show that the laser energy and the substrate temperature strongly affect the morphology and size of the growth islands and the deposition rate of thin film. Our results are in good agreement with the related experimental results.
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ZHANG Duan-Ming, GUAN Li, YU Bo-Ming, LI Zhi-Hua. Monte Carlo Simulation of Growth of Thin Film Prepared by Pulsed Laser[J]. Chin. Phys. Lett., 2003, 20(2): 263-266.
ZHANG Duan-Ming, GUAN Li, YU Bo-Ming, LI Zhi-Hua. Monte Carlo Simulation of Growth of Thin Film Prepared by Pulsed Laser[J]. Chin. Phys. Lett., 2003, 20(2): 263-266.
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ZHANG Duan-Ming, GUAN Li, YU Bo-Ming, LI Zhi-Hua. Monte Carlo Simulation of Growth of Thin Film Prepared by Pulsed Laser[J]. Chin. Phys. Lett., 2003, 20(2): 263-266.
ZHANG Duan-Ming, GUAN Li, YU Bo-Ming, LI Zhi-Hua. Monte Carlo Simulation of Growth of Thin Film Prepared by Pulsed Laser[J]. Chin. Phys. Lett., 2003, 20(2): 263-266.
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