Silicon-on-Insulating Multi-Layers for Total-Dose Irradiation Hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal--oxide--semiconductor (PMOS) transistors and metal--semiconductor--insulator--semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3×10⁵ rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.