Planar Channelling Criticalities of MeV Protons in Si Crystal: Simulations, Evaluation and Applications
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Abstract
We reports a phase-space structure of MeV proton beam planar channelled along 110 planes in Si crystal using simulation results with the help of a computer code FLUX. The aim is to understand channelling conditions suitable for disorder measurement in crystals. Phase-space distribution of a planar channelled proton beam evolutes in a systematic fashion when it travels into the crystal. Planar channelled beam oscillates between phase-like and space-like conditions in which a part of the beam becomes under phase and space criticalities. These criticality conditions in planar channelling are analysed, explained and discussed with the perspective of defect measurement in crystals.
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Mukhtar Ahmed Rana. Planar Channelling Criticalities of MeV Protons in Si Crystal: Simulations, Evaluation and Applications[J]. Chin. Phys. Lett., 2008, 25(10): 3724-3727.
Mukhtar Ahmed Rana. Planar Channelling Criticalities of MeV Protons in Si Crystal: Simulations, Evaluation and Applications[J]. Chin. Phys. Lett., 2008, 25(10): 3724-3727.
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Mukhtar Ahmed Rana. Planar Channelling Criticalities of MeV Protons in Si Crystal: Simulations, Evaluation and Applications[J]. Chin. Phys. Lett., 2008, 25(10): 3724-3727.
Mukhtar Ahmed Rana. Planar Channelling Criticalities of MeV Protons in Si Crystal: Simulations, Evaluation and Applications[J]. Chin. Phys. Lett., 2008, 25(10): 3724-3727.
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