Cubic Boron Nitride Films with Low Stress
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Abstract
We report a cubic boron nitride (c-BN) film with low stress. Infrared (IR) peak position of c-BN at 1006.3cm-1measured by IR spectroscopy shows that the c-BN film has very low internal stress which leads to an excellent adhesion. Transmission electron microscope micrograph indicates the only BN phase on the surface of the film is c-BN phase. It is clearly seen from IR spectra that the intermediate layer between the substrate and the c-BN layer is of the molecular crystal explosion boron nitride, hexagonal boron nitride, and wurtzic boron nitride.
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ZHAO Yong-nian, ZOU Guang-tian, HE Zhi, ZHU Pin-wen, WANG Xue-jin, ZHAO Bing. Cubic Boron Nitride Films with Low Stress[J]. Chin. Phys. Lett., 1999, 16(2): 155-156.
ZHAO Yong-nian, ZOU Guang-tian, HE Zhi, ZHU Pin-wen, WANG Xue-jin, ZHAO Bing. Cubic Boron Nitride Films with Low Stress[J]. Chin. Phys. Lett., 1999, 16(2): 155-156.
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ZHAO Yong-nian, ZOU Guang-tian, HE Zhi, ZHU Pin-wen, WANG Xue-jin, ZHAO Bing. Cubic Boron Nitride Films with Low Stress[J]. Chin. Phys. Lett., 1999, 16(2): 155-156.
ZHAO Yong-nian, ZOU Guang-tian, HE Zhi, ZHU Pin-wen, WANG Xue-jin, ZHAO Bing. Cubic Boron Nitride Films with Low Stress[J]. Chin. Phys. Lett., 1999, 16(2): 155-156.
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