High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100nm

Si₁₆Sb₈₄-based line cell phase change random access memory (PCRAM), in which the Si₁₆Sb₈₄ phase change line is contacted by TiN electrodes with a nanoscale gap, is fabricated by electron beam lithography. The lowest current and measured pulse width for RESET operation are 115μA and 18ns, respectively. The measured shortest pulse width for recrystallization is 110ns, with applied pulse amplitude of 1.5V. SET and RESET currents for line cells with different line lengths are determined. Endurance of 10⁶ cycles with a resistance ratio of above 800 has been achieved.