Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N₂O Doping

ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N₂O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3V and a reverse breakdown voltage higher than 6V. Distinct electroluminescence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.