Monte Carlo Simulation of Sculptured Thin Films Growth of SiO₂ on Si for Applications

A fully three-dimensional Monte Carlo model for simulation of sculptured thin-film growth is presented. After explaining the model, the simulation results are compared with the corresponding experiments, and encouraging consistency is proven. The morphology of sculptured thin films is then compared on periodical patterned and bare substrates. It is shown that there are more uniform structures and hence possible better optical properties by fabricating on patterned substrates. Finally, with the aid of computer simulation, we examine the self-shadowing effect and our theoretical analysis of simulated morphology data deals with the accuracy of this model.