Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs_1-ySb_y Grown on GaAs by Molecular Beam Epitaxy

A series of GaAs_1-ySb_y epilayers are grown on GaAs substrates under different growth conditions. Different antimony compositions of samples with
beryllium doping are obtained. A non-equilibrium thermodynamics model is used to calibrate and fit the Sb composition. Activation energy of 0.37eV for the dissociation process of Sb₄ molecules is obtained. Carrier mobility and concentration of samples are influenced by the Sb composition. Quasi-qualitative analysis of mobility is used to explain the relations among Sb composition, carrier mobility and concentration. High resolution x-ray diffraction (HRXRD) rocking curves and Hall effects measurements are used to determine the crystal quality, carrier mobility and concentration.