Influence of Width of Left Well on Intersubband Transitions in AlxGa1-x N/GaN Double Quantum Wells

  • Received Date: June 17, 2008
  • Published Date: August 31, 2008
  • Influence of width of left well in AlxGa1-xN/GaN double quantum wells (DQWs) on absorption coefficients and wavelengths of the intersubband transitions (ISBTs) is investigated by solving the Schrödinger and Poisson equations self-consistently. When the width of left well is 1.79nm, three-energy-level DQWs are realized. The ISBT between the first odd and second odd order subbands (the 1odd-2odd ISBT) has a comparable absorption coefficient with the 1 odd-2even ISBT. Their wavelengths are located at 1.3 and 1.55μm, respectively. When the width of left well is 1.48nm, a four-energy-level DQWs is realized. The calculated results have a possible application to ultrafast two-colour optoelectronic devices operating within the optical communication wavelength range
  • Article Text

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