TDPAC STUDY ON ANNEALING BEHAVIOR OF In IN Si AFTER RECOIL IMPLANTATION

Si wafer (N-type, P-doped, 1kΩ-cm) was implanted with ¹¹¹In by nuclear reaction recoils. Thermal annealing behavior of In in Si was studied by the time differential perturbed angular correlation technique. It is found that after 798°C annealing 55% of the In atoms occupy substitutional lattice sites in Si with the remainder in perturbed sites.