GENERATION RATE OF THE LIGHT-INDUCED DEFECTS AND THE TEMPERATURE DEPENDENCE OF PHOTOCONDUCTIVITY IN a–Si:H

The time dependence of the creation process of the light-induced defects is observed in a-Si:H. It is found that the density of defects increases with time of light exposure in two steps: at first ΔN_s^αt^0.7~1.0. and then ΔN_s^αt^1/3. Photoconductivity excited by photons of 1. 0eV between 130K and 200K shows an activation energy which decreases with prolonged light exposure.