Quasiparticle Band Structure of BaS
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Abstract
We calculate the band structure of BaS using the local density approximation and the GW approximation (GWA), i.e. in combination of the Green function G and the screened Coulomb interaction W. The Ba 4d states are treated as valence states. We find that BaS is a direct band-gap semiconductor. The result shows that the GWA band gap (Eg-GW=3.921eV) agrees excellently with the experimental result (Eg-EXPT=3.88eV or 3.9eV).
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LU Tie-Yu, CHEN De-Yan, HUANG Mei-Chun. Quasiparticle Band Structure of BaS[J]. Chin. Phys. Lett., 2006, 23(4): 943-945.
LU Tie-Yu, CHEN De-Yan, HUANG Mei-Chun. Quasiparticle Band Structure of BaS[J]. Chin. Phys. Lett., 2006, 23(4): 943-945.
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LU Tie-Yu, CHEN De-Yan, HUANG Mei-Chun. Quasiparticle Band Structure of BaS[J]. Chin. Phys. Lett., 2006, 23(4): 943-945.
LU Tie-Yu, CHEN De-Yan, HUANG Mei-Chun. Quasiparticle Band Structure of BaS[J]. Chin. Phys. Lett., 2006, 23(4): 943-945.
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