PHOTOREFLECTANCE OF TWO-DIMENSIONAL ELECTRON GAS IN THE SELECTIVELY DOPED GaAS /AlXGa1-XAs HETEROSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY
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Abstract
Room temperature photoreflectance were made on a selectively doped GaAs/n-AlXGa1-XAs two-dimensional electron gas grown by molecular beam epitaxy (MBE). The lineshapes can be made fit by Aspnes' theory, and the results explained with a simple model.
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TANG Yinsheng, JIANG Desheng. PHOTOREFLECTANCE OF TWO-DIMENSIONAL ELECTRON GAS IN THE SELECTIVELY DOPED GaAS /AlXGa1-XAs HETEROSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY[J]. Chin. Phys. Lett., 1987, 4(6): 283-285.
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TANG Yinsheng, JIANG Desheng. PHOTOREFLECTANCE OF TWO-DIMENSIONAL ELECTRON GAS IN THE SELECTIVELY DOPED GaAS /AlXGa1-XAs HETEROSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY[J]. Chin. Phys. Lett., 1987, 4(6): 283-285.
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TANG Yinsheng, JIANG Desheng. PHOTOREFLECTANCE OF TWO-DIMENSIONAL ELECTRON GAS IN THE SELECTIVELY DOPED GaAS /AlXGa1-XAs HETEROSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY[J]. Chin. Phys. Lett., 1987, 4(6): 283-285.
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TANG Yinsheng, JIANG Desheng. PHOTOREFLECTANCE OF TWO-DIMENSIONAL ELECTRON GAS IN THE SELECTIVELY DOPED GaAS /AlXGa1-XAs HETEROSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY[J]. Chin. Phys. Lett., 1987, 4(6): 283-285.
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