Experimental Study on Copper Vapor Laser-Induced B-Doping in Si-Substrate

In this paper we report the experimental results of copper vapor laser-induced B-doping in Si-substrate. The laser doped p-n junctions have depths less than 0.2μm and surface B concentrations more than 10²¹cm^-3. The highest photoelectric efficiency of solar cell reaches 9.2%. It shows that copper vapor laser has the distinguished advantage in laser-induced doping.