Femtosecond Optical Pump Induced Enhancement of Terahertz Radiation from GaAs Surface
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Abstract
Terahertz (THz) far infrared radiation with a subpicosecond pulse duration is generated from GaAs(100) surface illuminated by femtosecond laser pulses. By illuminating the sample with another pump pulse, we observe an enhancement of THz emission. A mechanism of photocarriers trapping by impurities and defects in the depletion layer is proposed.
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WANG Li, HE Wenguang, YANG Guozheu, ZHANG Xicheng. Femtosecond Optical Pump Induced Enhancement of Terahertz Radiation from GaAs Surface[J]. Chin. Phys. Lett., 1995, 12(11): 689-692.
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WANG Li, HE Wenguang, YANG Guozheu, ZHANG Xicheng. Femtosecond Optical Pump Induced Enhancement of Terahertz Radiation from GaAs Surface[J]. Chin. Phys. Lett., 1995, 12(11): 689-692.
|
WANG Li, HE Wenguang, YANG Guozheu, ZHANG Xicheng. Femtosecond Optical Pump Induced Enhancement of Terahertz Radiation from GaAs Surface[J]. Chin. Phys. Lett., 1995, 12(11): 689-692.
|
WANG Li, HE Wenguang, YANG Guozheu, ZHANG Xicheng. Femtosecond Optical Pump Induced Enhancement of Terahertz Radiation from GaAs Surface[J]. Chin. Phys. Lett., 1995, 12(11): 689-692.
|
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