Modelling of Chirality-Dependent Current--Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors

Current--voltage characteristics of ballistic carbon-nanotube field-effect transistors are characterized with an iterative simulation program. The influence of carbon-nanotube chirality and diameter on the output current is considered. An analytical current--voltage expression under the quantum capacitance limit and low-voltage application is derived. Our simulation results are compared with actual measurement data.