Photoluminescence Studies of Single Submonolayer InAs StructuresGrown on GaAs (001) Matrix
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Abstract
We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs (001) matrix. It is shown that the formation of InAs dots with 1 monolayer (ML) height leads to localization of exciton under certain submonolayer InAs coverage, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.
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LI Wei, WANG Zhanguo, LIANG Jiben, XU Bo, ZHU Zhanping, YUAN Zhiliang, LI Jian. Photoluminescence Studies of Single Submonolayer InAs StructuresGrown on GaAs (001) Matrix[J]. Chin. Phys. Lett., 1995, 12(11): 697-700.
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LI Wei, WANG Zhanguo, LIANG Jiben, XU Bo, ZHU Zhanping, YUAN Zhiliang, LI Jian. Photoluminescence Studies of Single Submonolayer InAs StructuresGrown on GaAs (001) Matrix[J]. Chin. Phys. Lett., 1995, 12(11): 697-700.
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LI Wei, WANG Zhanguo, LIANG Jiben, XU Bo, ZHU Zhanping, YUAN Zhiliang, LI Jian. Photoluminescence Studies of Single Submonolayer InAs StructuresGrown on GaAs (001) Matrix[J]. Chin. Phys. Lett., 1995, 12(11): 697-700.
|
LI Wei, WANG Zhanguo, LIANG Jiben, XU Bo, ZHU Zhanping, YUAN Zhiliang, LI Jian. Photoluminescence Studies of Single Submonolayer InAs StructuresGrown on GaAs (001) Matrix[J]. Chin. Phys. Lett., 1995, 12(11): 697-700.
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