Electroreflectance Study of Strained Layer GexSil-x/Si Multiple Quantum Wells
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Abstract
A set of strained-layer GexSil-x/Si multiple quantum wells has been investigated by electroreflectance (ER) spectroscopy. In the ER spectra we have observed transitions in the quantum wells associated with the critical points E0, E1, as well as E0¹. The transitions of E0 and E0¹, which are very weak in the bulk material, are apparently enhanced in quantum wells.
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PAN Shihong, HUANG Shuo, CHEN Wei, ZHANG Cunzhou, SHENG Chi, WANG Xun. Electroreflectance Study of Strained Layer GexSil-x/Si Multiple Quantum Wells[J]. Chin. Phys. Lett., 1994, 11(2): 119-122.
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PAN Shihong, HUANG Shuo, CHEN Wei, ZHANG Cunzhou, SHENG Chi, WANG Xun. Electroreflectance Study of Strained Layer GexSil-x/Si Multiple Quantum Wells[J]. Chin. Phys. Lett., 1994, 11(2): 119-122.
|
PAN Shihong, HUANG Shuo, CHEN Wei, ZHANG Cunzhou, SHENG Chi, WANG Xun. Electroreflectance Study of Strained Layer GexSil-x/Si Multiple Quantum Wells[J]. Chin. Phys. Lett., 1994, 11(2): 119-122.
|
PAN Shihong, HUANG Shuo, CHEN Wei, ZHANG Cunzhou, SHENG Chi, WANG Xun. Electroreflectance Study of Strained Layer GexSil-x/Si Multiple Quantum Wells[J]. Chin. Phys. Lett., 1994, 11(2): 119-122.
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