High Hole Mobility Si/Sil-xGex/Si Heterostructure
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Abstract
High mobility Si/Sil-xGex/Si p-type modulation-doped double heterostructures have been grown by RRH/VLP-CVD (rapid radiant heating/very low pressure-CVD). Hole Hall mobilities as high as about 300cm2/V.s(293 K) and 7500cm2/V.s(77K) have been obtained for heterostructures with x = 0.3. The variation of hole mobility with temperature and the influence of Ge fraction on hole mobility were investigated.
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JIANG Ruolian, LIU Jianlin, ZHENG Youdou, ZHENG Guozhen, WEI Yayi, SHEN Xuechu. High Hole Mobility Si/Sil-xGex/Si Heterostructure[J]. Chin. Phys. Lett., 1994, 11(2): 116-118.
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JIANG Ruolian, LIU Jianlin, ZHENG Youdou, ZHENG Guozhen, WEI Yayi, SHEN Xuechu. High Hole Mobility Si/Sil-xGex/Si Heterostructure[J]. Chin. Phys. Lett., 1994, 11(2): 116-118.
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JIANG Ruolian, LIU Jianlin, ZHENG Youdou, ZHENG Guozhen, WEI Yayi, SHEN Xuechu. High Hole Mobility Si/Sil-xGex/Si Heterostructure[J]. Chin. Phys. Lett., 1994, 11(2): 116-118.
|
JIANG Ruolian, LIU Jianlin, ZHENG Youdou, ZHENG Guozhen, WEI Yayi, SHEN Xuechu. High Hole Mobility Si/Sil-xGex/Si Heterostructure[J]. Chin. Phys. Lett., 1994, 11(2): 116-118.
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