Electronic Structure of Type-II InAs/GaSb Misaligned Superlattice
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Abstract
The Energy band edges of type-II InAs/GaSb (001) misaligned superlattices as functions of InAs and GaSb layer thicknesses are calculated by a pseudopotential method with quick convergency. The results show the trend of deep-shallow transitions of impurities in the superlattices. The regime in which the superlattice changes from semiconductor to semimetal is also showed.
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LONG Fei, LIU Shenzhi, MEI Fei, MIAO Jingqi, LIANG Jingguo. Electronic Structure of Type-II InAs/GaSb Misaligned Superlattice[J]. Chin. Phys. Lett., 1994, 11(2): 109-112.
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LONG Fei, LIU Shenzhi, MEI Fei, MIAO Jingqi, LIANG Jingguo. Electronic Structure of Type-II InAs/GaSb Misaligned Superlattice[J]. Chin. Phys. Lett., 1994, 11(2): 109-112.
|
LONG Fei, LIU Shenzhi, MEI Fei, MIAO Jingqi, LIANG Jingguo. Electronic Structure of Type-II InAs/GaSb Misaligned Superlattice[J]. Chin. Phys. Lett., 1994, 11(2): 109-112.
|
LONG Fei, LIU Shenzhi, MEI Fei, MIAO Jingqi, LIANG Jingguo. Electronic Structure of Type-II InAs/GaSb Misaligned Superlattice[J]. Chin. Phys. Lett., 1994, 11(2): 109-112.
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