Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si39Sb Te50) for Phase Change Memory
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Abstract
The multiple-state storage capability of phase change memory (PCM) is confirmed by using stacked chalcogenide films as the storage medium. The current--voltage characteristics and the resistance--current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si--Sb--Te layers triggered by different amplitude currents.
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LAI Yun-Feng, FENG Jie, QIAO Bao-Wei, HUANG Xiao-Gang, CAI Yan-Fei, LIN Yin-Yin, TANG Ting-Ao, CAI Bing-Chu, CHEN Bomy. Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si39Sb Te50) for Phase Change Memory[J]. Chin. Phys. Lett., 2006, 23(9): 2516-2518.
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LAI Yun-Feng, FENG Jie, QIAO Bao-Wei, HUANG Xiao-Gang, CAI Yan-Fei, LIN Yin-Yin, TANG Ting-Ao, CAI Bing-Chu, CHEN Bomy. Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si39Sb Te50) for Phase Change Memory[J]. Chin. Phys. Lett., 2006, 23(9): 2516-2518.
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LAI Yun-Feng, FENG Jie, QIAO Bao-Wei, HUANG Xiao-Gang, CAI Yan-Fei, LIN Yin-Yin, TANG Ting-Ao, CAI Bing-Chu, CHEN Bomy. Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si39Sb Te50) for Phase Change Memory[J]. Chin. Phys. Lett., 2006, 23(9): 2516-2518.
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LAI Yun-Feng, FENG Jie, QIAO Bao-Wei, HUANG Xiao-Gang, CAI Yan-Fei, LIN Yin-Yin, TANG Ting-Ao, CAI Bing-Chu, CHEN Bomy. Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si39Sb Te50) for Phase Change Memory[J]. Chin. Phys. Lett., 2006, 23(9): 2516-2518.
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