Damage Production and Annealing During MeV He Ion RBS/Channeling Analysis of GaP

The creation of defects in GaP bombarded with MeV ⁴He ions has been studied under ultra-high-vacuum condition by Rutherford backscattering/channeling (RBS/C) method. Our experimental results suggest that the defect generation rate is strongly related to the surface condition. When the GaP is covered with a thin amorphous layer, a significant ion beam annealing effect Will be observed. The present results show that for GaP the damage is produced mainly by nuclear collision.