Photoelectrochemical Behavior of the GaAs/A1xGal-xAs Superlattice Elect rode/Electrolyte Interface
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Abstract
Single and multiple quantum wells of lattice-matched superlattices material GaAs/A1xGal-xAs have been studied as photoelectrodes in photoelectrochemical cells containing nonaqueous electrolyte. Structured photocurrent spectra in the potential range of -1.8 to 1.0 V (vs standard calomel electrode) were obtained. The quantum yields for both superlattice electrodes were estimated and compared.
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LIU Yao, XIAO Xurui, LI Xueping, REN Xinmin, ZHENG Haiqun, ZENG Yiping, YAN Chunhui, SUN Dianzhao. Photoelectrochemical Behavior of the GaAs/A1xGal-xAs Superlattice Elect rode/Electrolyte Interface[J]. Chin. Phys. Lett., 1994, 11(4): 239-241.
LIU Yao, XIAO Xurui, LI Xueping, REN Xinmin, ZHENG Haiqun, ZENG Yiping, YAN Chunhui, SUN Dianzhao. Photoelectrochemical Behavior of the GaAs/A1xGal-xAs Superlattice Elect rode/Electrolyte Interface[J]. Chin. Phys. Lett., 1994, 11(4): 239-241.
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LIU Yao, XIAO Xurui, LI Xueping, REN Xinmin, ZHENG Haiqun, ZENG Yiping, YAN Chunhui, SUN Dianzhao. Photoelectrochemical Behavior of the GaAs/A1xGal-xAs Superlattice Elect rode/Electrolyte Interface[J]. Chin. Phys. Lett., 1994, 11(4): 239-241.
LIU Yao, XIAO Xurui, LI Xueping, REN Xinmin, ZHENG Haiqun, ZENG Yiping, YAN Chunhui, SUN Dianzhao. Photoelectrochemical Behavior of the GaAs/A1xGal-xAs Superlattice Elect rode/Electrolyte Interface[J]. Chin. Phys. Lett., 1994, 11(4): 239-241.
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