A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode
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Abstract
We report a resonant tunnelling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current--voltage (I--V) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09ps.
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Cite this article:
MA Long, HUANG Ying-Long, ZHANG Yang, WANG Liang-Chen, YANG Fu-Hua, ZENG Yi-Ping. A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode[J]. Chin. Phys. Lett., 2006, 23(8): 2292-2295.
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MA Long, HUANG Ying-Long, ZHANG Yang, WANG Liang-Chen, YANG Fu-Hua, ZENG Yi-Ping. A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode[J]. Chin. Phys. Lett., 2006, 23(8): 2292-2295.
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MA Long, HUANG Ying-Long, ZHANG Yang, WANG Liang-Chen, YANG Fu-Hua, ZENG Yi-Ping. A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode[J]. Chin. Phys. Lett., 2006, 23(8): 2292-2295.
|
MA Long, HUANG Ying-Long, ZHANG Yang, WANG Liang-Chen, YANG Fu-Hua, ZENG Yi-Ping. A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode[J]. Chin. Phys. Lett., 2006, 23(8): 2292-2295.
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