Compact, Low Threshold Nd3+:YVO4 Self-Raman Laser at 1178nm
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Abstract
A compact low-threshold Raman laser at 1178nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd3+:YVO4 self-Raman laser. The threshold is 370mW at a pulse repetition frequency of 5kHz. The maximum Raman laser output is 182mW with the pulse duration smaller than 20ns at a pulse repetition frequency of 30kHz with 1.8W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficiency is 13.5%.
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WANG Bao-Shan, TAN Hui-Ming, GAO Lan-Lan, PENG Ji-Ying, MIAO Jie-Guang. Compact, Low Threshold Nd3+:YVO4 Self-Raman Laser at 1178nm[J]. Chin. Phys. Lett., 2006, 23(8): 2095-2097.
WANG Bao-Shan, TAN Hui-Ming, GAO Lan-Lan, PENG Ji-Ying, MIAO Jie-Guang. Compact, Low Threshold Nd3+:YVO4 Self-Raman Laser at 1178nm[J]. Chin. Phys. Lett., 2006, 23(8): 2095-2097.
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WANG Bao-Shan, TAN Hui-Ming, GAO Lan-Lan, PENG Ji-Ying, MIAO Jie-Guang. Compact, Low Threshold Nd3+:YVO4 Self-Raman Laser at 1178nm[J]. Chin. Phys. Lett., 2006, 23(8): 2095-2097.
WANG Bao-Shan, TAN Hui-Ming, GAO Lan-Lan, PENG Ji-Ying, MIAO Jie-Guang. Compact, Low Threshold Nd3+:YVO4 Self-Raman Laser at 1178nm[J]. Chin. Phys. Lett., 2006, 23(8): 2095-2097.
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