Role of Residual O2 in Fabrication of A1-MgF2-Au(Cu) Thin Film Devices
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Abstract
After the light emitting device Al-MgF2-Au (Cu) junction was reported, we made a further investigation about its structure, high voltage-resistance, explaination of l-V characteristic and mechanism of light emission of these junctions through analyzing in detail. The residual O2 during fabricating the junctions plays an important role in the properties of the junctions.
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ZHENG Keqin, SHU Qiqing, CHEN Xinyong. Role of Residual O2 in Fabrication of A1-MgF2-Au(Cu) Thin Film Devices[J]. Chin. Phys. Lett., 1994, 11(6): 379-382.
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ZHENG Keqin, SHU Qiqing, CHEN Xinyong. Role of Residual O2 in Fabrication of A1-MgF2-Au(Cu) Thin Film Devices[J]. Chin. Phys. Lett., 1994, 11(6): 379-382.
|
ZHENG Keqin, SHU Qiqing, CHEN Xinyong. Role of Residual O2 in Fabrication of A1-MgF2-Au(Cu) Thin Film Devices[J]. Chin. Phys. Lett., 1994, 11(6): 379-382.
|
ZHENG Keqin, SHU Qiqing, CHEN Xinyong. Role of Residual O2 in Fabrication of A1-MgF2-Au(Cu) Thin Film Devices[J]. Chin. Phys. Lett., 1994, 11(6): 379-382.
|
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