CHARACTERS OF NTD FZ(H₂) Si KEPT AT ROOM TEMPERATURE FOR THREE YEARS

It has been found that the hydrogen-defect shallow donors do not appear, and some strong neutron radiation-induced Si-H IR bands, such as 1832 and 2054cm^-1 disappear; but the strength of some others, e.g. 1979 and 2065 cm^-1 increases greatly for NTD FZ(H₂) Si kept at room temperature for 3 years. These changes indicate that at room temperature simple point defects diffuse and interact, and hydrogen atoms trap the vacancy and vacancy cluster defects. This gives important information in the discussion of the micro-structures of the above Si-H IR bands.