CN_x Films Deposited by Laser Ablation of Graphite Under Low Energy Nitrogen-Ion Beam Bombardment

Deposition of CN_x thin films on Si(111) has been performed by laser ablation of graphite under a low-energy nitrogen ion beam bombardment. Films with a maximum N-concentration of 34% are obtained. The N species is found to be relatively constant along the depth of films. X-ray spectroscopy data confirm the existence of covalent C - N bonds. Nanocrystallites structure has been detected in the amorphous matrix of the films. Qualitative hardness tests indicate that the films are relatively hard and adhesive.