Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects
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Abstract
Considering the three-dimensional confinement of the electrons and holes and the strong built-in electric field (BEF) in the wurtzite InGaN strained coupled quantum dots (QDs), the positively charged donor bound exciton states and interband optical transitions are investigated theoretically by means of a variational method. Our calculations indicate that the emission wavelengths sensitively depend on the donor position, the strong BEF, and the structure parameters of the QD system. -
References
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