A New Method for Studying the Distribution of Induced Defects in Potential Wells in a-Si : H/a-SiN_x : H Multilayer

The induced defects and their distribution in a-Si: H/a-SiN_x : H multilayers can be determined by use of electromagnetic technique. It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are asymmetric and related to the growth direction of the film; a large number of induced defects exist in the interface region away from substrate, but few or no in the interface region near substrate.