Fabrication of GaN Nanorods in a Large Scale on Si(111) Substrate by Ammoniating Technique

GaN nanorods in a large scale have been synthesized on Si (111) substrates by ammoniating Ga₂O₃/Mg films under flowing ammonia atmosphere at the temperature of 1000°C for 15min. The as-synthesized GaN nanorods are characterized by scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. The results demonstrate that these straight nanorods are hexagonal wurtzite GaN single crystals in diameters ranging from 200nm to 600nm.