Synthesis of GaN Nanorods by Ammoniating Ga₂O₃/ZnO Films

Large quantities of GaN nanorods are successfully synthesized on Si(111) substrates by ammoniating the films of Ga₂O₃/ZnO at 950°C in a quartz tube. The structure, morphology and optical properties of the as-prepared GaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the GaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80nm to 300nm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.