Computer Simulation of Sputtering and Atomic Redistribution inHg_0.8Cd_0.2Te Targets Under Ar⁺ Ions Bombardment

The sputtering of Hg_0.8Cd_0.2Te target by low energy Ar⁺ ions has been simulated using Monte Carlo method. The simulation results show that the concentration of Hg in the surface region of the target after ion bombardment is lower than the one before ion bombardment, but in a deeper region an excess concentration of Hg is produced due to recoil implantation. The excess concentration of Hg there may act as a donor dopant diffusion source for over doping the acceptor levels in the adjacent region and turn the p-type Hg_0.8Cd_0.2Te into an n-type material.