Abnormal Photoluminescence Properties of Polycrystalline ZnO Nanowire Arrays Synthesized by Electrodeposition
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Abstract
Large-scale ZnO nanowire arrays are synthesized by electrodeposition with subsequent heat treatment in atmosphere ambient at 450--650°C. Photoluminescence (PL) is investigated at 295K. Abnormal PL properties of an unusual sharp emission at 485nm and a broad ultraviolet emission which are different from the other works of ZnO PL before are observed. Field emission scanning electronic microscopy and transmission electron microscopy results show that the length of ZnO nanowires is nearly 5μm and their diameter is about 70nm. X-ray diffraction and electron diffraction results reveal that the ZnO nanowires are a polycrystalline structure.
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XUE De-Sheng, GONG Yu. Abnormal Photoluminescence Properties of Polycrystalline ZnO Nanowire Arrays Synthesized by Electrodeposition[J]. Chin. Phys. Lett., 2006, 23(11): 3105-3107.
XUE De-Sheng, GONG Yu. Abnormal Photoluminescence Properties of Polycrystalline ZnO Nanowire Arrays Synthesized by Electrodeposition[J]. Chin. Phys. Lett., 2006, 23(11): 3105-3107.
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XUE De-Sheng, GONG Yu. Abnormal Photoluminescence Properties of Polycrystalline ZnO Nanowire Arrays Synthesized by Electrodeposition[J]. Chin. Phys. Lett., 2006, 23(11): 3105-3107.
XUE De-Sheng, GONG Yu. Abnormal Photoluminescence Properties of Polycrystalline ZnO Nanowire Arrays Synthesized by Electrodeposition[J]. Chin. Phys. Lett., 2006, 23(11): 3105-3107.
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