Characteristics of High In-Content InGaN Alloys Grown by MOCVD

InN and In_0.46Ga_0.54N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 475 cm²V^-1s^-1 and that of In_0.46Ga_0.54 is 163 cm²V^-1s^-1;. Room-temperature photoluminescence measurement of the InN film shows a peak at 0.72 eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.