Effects of H⁺-Implantation on the Formation of Secondary Defects in Self-Implanted Si(100)

By using the plan-view transmission electron microscopy, cross-sectional transmission electron microscopy, and Rutherford backscattering (and channeling) spectrometry technology, the effects of H⁺-implantation on the formation of secondary defects in self-implanted Si(100) were investigated. Experiments indicate that the H⁺-implantation can reduce the formation of secondary defects and improve the perfection of crystal in self-implanted Si(100).