Semiconductor-Like Properties of Sputtered Fe_xCu_l-x Thin Films

Amorphous Fe_xCu_l-x thin films with x ranging from 0.21 to 0.81 have been obtained by rf-magnetron sputtering. The structure and the electric transport properties of the films can be controlled by both the composition and annealing temperature. The resistances of the films decrease with the temperature increasing from 12 to 300K, which is the typical semiconductor characteristic. After annealing at 400°C for 5h, the amorphous Fe_xCu_l-x thin film is crystallized and exhibits electric transport property an normal metal film. The dependence of resistance- temperature characteristics of the films on the composition and deposition time is described.