A New Interface Anisotropic Potential of Zinc-Blende Semiconductor Interface Induced by Lattice Mismatch
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Abstract
A new interface anisotropic potential, which is proportional to the lattice mismatch of interfaces and has no fitting parameter, has been deduced for (001) zinc-blende semiconductor interfaces. The comparison with other interface models is given for GaAs/AlAs and GaAs/InAs interfaces. The strong influence of the interface anisotropic potential on the inplane optical anisotropy of GaAs/AlGaAs low dimensional structures is demonstrated theoretically within the envelope function approximation.
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CHEN Yong-hai, WANG Zhan-guo, YANG Zhi-yu. A New Interface Anisotropic Potential of Zinc-Blende Semiconductor Interface Induced by Lattice Mismatch[J]. Chin. Phys. Lett., 1999, 16(1): 56-58.
CHEN Yong-hai, WANG Zhan-guo, YANG Zhi-yu. A New Interface Anisotropic Potential of Zinc-Blende Semiconductor Interface Induced by Lattice Mismatch[J]. Chin. Phys. Lett., 1999, 16(1): 56-58.
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CHEN Yong-hai, WANG Zhan-guo, YANG Zhi-yu. A New Interface Anisotropic Potential of Zinc-Blende Semiconductor Interface Induced by Lattice Mismatch[J]. Chin. Phys. Lett., 1999, 16(1): 56-58.
CHEN Yong-hai, WANG Zhan-guo, YANG Zhi-yu. A New Interface Anisotropic Potential of Zinc-Blende Semiconductor Interface Induced by Lattice Mismatch[J]. Chin. Phys. Lett., 1999, 16(1): 56-58.
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