Acoustoelectric Nonlinear Effect of Vertically Incident Bulk Wave at LiNbO₃/Si Boundary

The acoustoelectric nonlinear effect due to the electrical nonlinearity of semi-conductor has been observed as presented in this article by using vertically incident bulk wave at LiNbO₃/Si boundary. This effect is closely related to the bias voltage applied to the semiconductor Si. The results we have obtained provide a feasible new structure for the further study of acoustoelectric nonlinear coupling between piezoelectrics and semiconductors.