Diode End-Pumped Passively Q-Switched Nd³⁺:GdVO₄ Self-Raman Laser at 1176nm

A compact diode-end-pumped passively Q-switched Nd³⁺:GdVO₄/Cr⁴⁺:YAG self-Raman laser at 1176nm is demonstrated. When the T₀=80% Cr⁴⁺:YAG saturable absorber is inserted into the cavity, the maximum Raman laser output reaches 175mW with 3.8W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8,ns, and 38.5kHz, respectively. There is trong blue emission (about 350--400nm) can be observed in the d³⁺:GdVO₄ crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the d³⁺ ions.