Mechanism for the Nanometer Scale Modification on HOPGSurface by Scanning Tunneling Microscope
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Abstract
A technique applying voltage across the tunnel junction for writing permanent features on graphite with lines about 10nm width using our home-built scanning tunneling microscope has been presented. Multiple effects while modifying the surface arc often met. The phenomena are explained in terms of the strong electric field existing at the junction between the tip and the surface. In addition, the shape of the structure indented by the tip is in agreement with that of the tip.
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WANG Zhonghuai, DAI Changchun, ZHANG Pingchen, HUANG Guizhen, LI Renli, GUO Yi, BAI Chunli. Mechanism for the Nanometer Scale Modification on HOPGSurface by Scanning Tunneling Microscope[J]. Chin. Phys. Lett., 1993, 10(9): 535-538.
WANG Zhonghuai, DAI Changchun, ZHANG Pingchen, HUANG Guizhen, LI Renli, GUO Yi, BAI Chunli. Mechanism for the Nanometer Scale Modification on HOPGSurface by Scanning Tunneling Microscope[J]. Chin. Phys. Lett., 1993, 10(9): 535-538.
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WANG Zhonghuai, DAI Changchun, ZHANG Pingchen, HUANG Guizhen, LI Renli, GUO Yi, BAI Chunli. Mechanism for the Nanometer Scale Modification on HOPGSurface by Scanning Tunneling Microscope[J]. Chin. Phys. Lett., 1993, 10(9): 535-538.
WANG Zhonghuai, DAI Changchun, ZHANG Pingchen, HUANG Guizhen, LI Renli, GUO Yi, BAI Chunli. Mechanism for the Nanometer Scale Modification on HOPGSurface by Scanning Tunneling Microscope[J]. Chin. Phys. Lett., 1993, 10(9): 535-538.
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