Electronic Structures of Wurtzite Compounds GaN, AlN andStrained-Layer Superlattice (Ga2N2)1(A12N2)1(001)
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Abstract
The electronic structures of wurtzite compounds GaN, AlN and strained-layer superlattice (SLS) (Ga2N2)1(A12N2)1 (001) constituted by straining GaN-layer to match the lattice constant of AlN according to the elastic theory are studied with the first-principles Linearized-Muffin-Tin-Orbitals band-structure method. The band offsets at the SLS are determined by the frozen potential approach. The resutls of the bulk materials are in good agreement with available experimental data.
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KE Sanhuang, HUANG Meichun, WANG Renzhi. Electronic Structures of Wurtzite Compounds GaN, AlN andStrained-Layer Superlattice (Ga2N2)1(A12N2)1(001)[J]. Chin. Phys. Lett., 1993, 10(12): 748-751.
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KE Sanhuang, HUANG Meichun, WANG Renzhi. Electronic Structures of Wurtzite Compounds GaN, AlN andStrained-Layer Superlattice (Ga2N2)1(A12N2)1(001)[J]. Chin. Phys. Lett., 1993, 10(12): 748-751.
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KE Sanhuang, HUANG Meichun, WANG Renzhi. Electronic Structures of Wurtzite Compounds GaN, AlN andStrained-Layer Superlattice (Ga2N2)1(A12N2)1(001)[J]. Chin. Phys. Lett., 1993, 10(12): 748-751.
|
KE Sanhuang, HUANG Meichun, WANG Renzhi. Electronic Structures of Wurtzite Compounds GaN, AlN andStrained-Layer Superlattice (Ga2N2)1(A12N2)1(001)[J]. Chin. Phys. Lett., 1993, 10(12): 748-751.
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