Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes

GaN-based light-emitting diodes (LEDs) with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay (20Å). An Ag (3000Å) omni-directional reflector covers the p-type contact. The n-type contact is a Ti/Al planar film with a 10-μm-width Ti/Al stripe. The Ti/Al stripe surrounds the centre of LED mesa. With a 20-mA current injection, the light output power of GaN-based LEDs with mesh-contact electrodes is 23% higher than that of the conventional LEDs.