Preparation of High Quality p-Type Diamond Thin Films by Thermal Chemical Vapor Deposition

P-type semiconducting polycrystalline diamond thin films doped with boron were synthesized on single crystalline silicon substrate by thermal chemical vapor deposition from a tungsten filament and placing boron-contained substance (boron nitride or elemental boron) on sample holder. The films were determined to be the high quality diamond by Raman spectroscopy, X-ray diffraction and scanning electron microscope measurements. The doping properties of boron were measured by Hall method and infrared absorption.