Optoelectronic Properties Modulated by Means of Change in Lattice Sites of Impurity in LiNbO₃ Crystals

This paper discusses the actual possibility of altering artificially certain optoelectronic properties of LiNbO₃ crystals by means of change in lattice site of a few Me³⁺ ions in the crystals. A new lattice site Cr³⁺ defect in Cr-doped LiNbO₃ vapour transport equilibration has been displayed as a practical example.