Silicon-on-Insulator 2 × 2 Symmetric Optical Switch Based on Total Internal Reflection
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Abstract
Based on the large cross-section single-mode rib waveguide condition, the total internal reflection and the free-carrier plasma dispersion effect, a silicon-on-insulator (SOI) 2 × 2 symmetric optical waveguide switch with a transverse injection structure has been proposed and fabricated, in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. The device performance is measured at the wavelength of 1.3μm. It shows that the crosstalk and insertion loss are less than -18.1 and 4.8 dB, respectively, at an injection current of 60mA, and response time is 110 ns.
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ZHAO Ce-zhou, LIU En-ke, LI Guo-zheng, LIU Yu-liang, GUO Lin. Silicon-on-Insulator 2 × 2 Symmetric Optical Switch Based on Total Internal Reflection[J]. Chin. Phys. Lett., 1997, 14(2): 106-108.
ZHAO Ce-zhou, LIU En-ke, LI Guo-zheng, LIU Yu-liang, GUO Lin. Silicon-on-Insulator 2 × 2 Symmetric Optical Switch Based on Total Internal Reflection[J]. Chin. Phys. Lett., 1997, 14(2): 106-108.
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ZHAO Ce-zhou, LIU En-ke, LI Guo-zheng, LIU Yu-liang, GUO Lin. Silicon-on-Insulator 2 × 2 Symmetric Optical Switch Based on Total Internal Reflection[J]. Chin. Phys. Lett., 1997, 14(2): 106-108.
ZHAO Ce-zhou, LIU En-ke, LI Guo-zheng, LIU Yu-liang, GUO Lin. Silicon-on-Insulator 2 × 2 Symmetric Optical Switch Based on Total Internal Reflection[J]. Chin. Phys. Lett., 1997, 14(2): 106-108.
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