SELF- AND IMPURITY-DIFFUSION MECHANISMS IN UNDOPED AND MODULATION-DOPED (GaA1)As SUPERLATTICES

The charged states of antisites and interstitials in undoped and n- or p-type Si modulation-doped ( GaAl ) As superlattices have been determined by the calculated electronic structures wing recursion method within tight-binding formalism. Based on the behavior of these point defects, some new mechanisms that describe the self-diffusion and impurity diffusion processes are suggested and discussed.