Implantation Energy Selection in Molecular-Beam Epitaxy GaAs Films on Si Substrates

GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25μm on Si have been implanted with Si ions at 1.2MeV to dose of 1x10¹⁵/cm². A rapid infrared thermal annealing and white light annealing were then used for recrystallization. Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2MeV. The experimental result show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers.