Formation of Nitride Cu3N by MeV N-Ion Implantation into Cu
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Abstract
Experimental evidences are presented to show the formation of nitride, Cu3N, in pure Cu sample by N-ion implantation. This result is obtained in the case of MeV ion implantation. Previous experiments showed that this compound can not be formed by N-ion implantation into Cu at incident energy of about 100 keV. This finding indicates there exist certain differences in phase formation by ion implantation at the two energies.
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CUI Fuzhai, A.M. Vredenberg, R. de Reus, F. W. Saris. Formation of Nitride Cu3N by MeV N-Ion Implantation into Cu[J]. Chin. Phys. Lett., 1991, 8(10): 525-528.
CUI Fuzhai, A.M. Vredenberg, R. de Reus, F. W. Saris. Formation of Nitride Cu3N by MeV N-Ion Implantation into Cu[J]. Chin. Phys. Lett., 1991, 8(10): 525-528.
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CUI Fuzhai, A.M. Vredenberg, R. de Reus, F. W. Saris. Formation of Nitride Cu3N by MeV N-Ion Implantation into Cu[J]. Chin. Phys. Lett., 1991, 8(10): 525-528.
CUI Fuzhai, A.M. Vredenberg, R. de Reus, F. W. Saris. Formation of Nitride Cu3N by MeV N-Ion Implantation into Cu[J]. Chin. Phys. Lett., 1991, 8(10): 525-528.
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